X-rays in Semiconductor
Sigray’s x-ray solutions include 3D x-ray microscopes and microXRF systems in vacuum environments. These systems are used for a range of semiconductor applications, including everything from inspection of wafer contamination and silicon-side process monitoring to failure analysis of packaging.
Packaging Failure Analysis at Highest Resolution
The ever-shrinking dimensions of advanced packaging necessitates ultrahigh resolution in large, intact packages. Sigray produces one systems: EclipseXRM-900 (ultrahigh resolution) for semiconductor needs in failure analysis.
Both represent a significant advancement over existing 3D x-ray microscopes (XRMs), which have become a workhorse for semiconductor FA, but are limited by their reliance on two-stage magnification geometries that require inefficient, ultrathin scintillators.
X-rays for Circuit Debugging (X-ray Assisted Device Alteration)
Backside power delivery (BPD) is widely anticipated in the semiconductor industry as a pivotal development, enabling more efficient power delivery through reduced resistance and significant improvements in transistor density (20-30% cell area reduction). However, a key challenge with BPD is that existing circuit debugging and marginal fault isolation techniques, such as LADA (laser assisted device alteration), will become obsolete.
To address this, Sigray has developed a novel technique called X-ray Assisted Device Alteration (XADA). The Sigray XADA-200 enables microns-scale probing of intact devices under test (DUT) to isolate critical speed paths. Its introduction won the Outstanding Paper of the Year at ISTFA 2022, co-published with Dr. William Lo at NVIDIA.
Organic Contaminants and Trace Low-Z Elements
There is a general misperception that quantification of low atomic number (Z) elements such as B, C, O, and N at minor to trace levels is not achievable with microXRF at high resolutions. AttoMap-310 features a high vacuum chamber and a patented Si-based x-ray source that provides optimal illumination for low atomic number elements. Information on B doping and organic contamination can be achieved at excellent resolution (10-100 µm).
Trace Residue and Dopant Monitoring for Critical Semiconductor Elements
Sigray’s AttoMap XRF has been adopted by leading semiconductor companies for inspection of emerging FEOL processes due to its accurate quantification and small spot sizes of 3-20 µm, allowing focusing of the beam completely within a 40 µm test pattern. The high sensitivity of the AttoMap enables quantitative analysis of trace levels of dopants and has demonstrated down to sub-Angstrom equivalent thickness.
Download X-ray Solution Brochure for Semiconductor
